Effects of gate bias stressing in power vdmosfets
نویسندگان
چکیده
منابع مشابه
Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs
Threshold voltage shifts associated with negative gate bias temperature instability in p-channel power VDMOSFETs under the static and pulsed stress conditions are analysed in terms of the effects on device lifetime. The pulsed bias stressing is found to cause less significant threshold voltage shifts in comparison with those caused by the static stressing, which is ascribed to the effects of dy...
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The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs
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ژورنال
عنوان ژورنال: Serbian Journal of Electrical Engineering
سال: 2003
ISSN: 1451-4869,2217-7183
DOI: 10.2298/sjee0301089s